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Si4563DY
Vishay Siliconix
N- and P-Channel 40-V (D-S) MOSFET
PRODUCT SUMMARY
FEATURES
V DS (V)
R DS(on) ( Ω )
I D (A) a Q g (Typ.)
? Halogen-free According to IEC 61249-2-21
Available
N-Channel
P-Channel
40
- 40
0.016 at V GS = 10 V
0.019 at V GS = 4.5 V
0.025 at V GS = - 10 V
0.032 at V GS = - 4.5 V
8
8
-8
- 7.5
56
6
? TrenchFET ? Power MOSFET
? 100 % R g Tested
APPLICATIONS
? CCFL Inverter
SO-8
D 1
S 2
S 1
1
8
D 1
G 1
S 2
G 2
2
3
4
7
6
5
D 1
D 2
D 2
G 1
G 2
Top View
Ordering Information: Si4563DY-T1-E3 (Lead (Pb)-free)
Si4563DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
S 1
N-Channel MOSFET
D 2
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T A = 25 °C, unless otherwise noted
Parameter
Symbol
N-Channel
P-Channel
Unit
Drain-Source Voltage
Gate-Source Voltage
V DS
V GS
40
± 16
- 40
V
T C = 25 °C
8
-8
Continuous Drain Current (T J = 150 °C)
T C = 70 °C
T A = 25 °C
T A = 70 °C
I D
8
8 b, c
b, c
6.5
- 6.5
- 6.6 b, c
- 5.2 b, c
Pulsed Drain Current (10 μs Pulse Width)
I DM
20
- 20
A
Source-Drain Current Diode Current
Pulsed Source-Drain Current
T C = 25 °C
T A = 25 °C
I S
I SM
2.7
1.6 b, c
20
- 2.7
- 1.6 b, c
- 20
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
L = 0 1 mH
I AS
E AS
20
20
25
31.2
mJ
T C = 25 °C
3.25
3.25
2.0
Maximum Power Dissipation
T C = 70 °C
T A = 25 °C
P D
2.10
b, c
2.10
2.0 b, c
W
T A = 70 °C
1.25 b, c
1.25 b, c
Operating Junction and Storage Temperature Range
T J , T stg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
N-Channel
P-Channel
Parameter
Symbol
Typ.
Max.
Typ.
Max.
Unit
Maximum Junction-to-Ambient b, d
Maximum Junction-to-Foot (Drain)
t ≤ 10 s
Steady State
R thJA
R thJF
45
29
62.5
38
45
29
62.5
38
°C/W
Notes:
a. Based on T C = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 120 °C/W.
Document Number: 73513
S09-0393-Rev. C, 09-Mar-09
www.vishay.com
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